Operation module(Chamber)
  Module composition : Process, Transfer Module
  Material : SUS304 / Electro-polished
   
Source
  Target material : Metal, Oxide,Nitride, Semiconductor
  Target size : 6" (option)
  Source type :
  - RF Ion Beam Sputter Source
  - RF Ion Beam Assist Source
  - Wafer uniformity : <±2%> on 6" Diameter
   
Substrate holder
  Heating Temp. : Max 600 ℃ (<5 %)>
  Z-motion : 100mm
  Rotation : 100RPM
  Sample Size : 6" or 150x150 (Option)
 
Pumping system
  Low Vacuum Pump : Rotary Pump
  High Vacuum pump : Turbo molecular pump
  Ultimate Pressure : 1.0 X 10-6 Torr
 
Gas operation
  Flow control : Ar, O2, N2 / 100 sccm
 
System control
  Operating System :
   HMI Software/PLC Based Process Control,
   Fully Automated System, Safety Interlock System
  Source control :
  - Ion Beam Power Supply
  - RF Genenrator(1000W) with Matching Box